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IPD50N04S3-09
  • IPD50N04S3-09

IPD50N04S3-09

Infineon Technologies IPD50N04S3-09 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.48

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Malaysia

ID (@25°C) max

50 A

IDpuls max

200 A

Launch year

2008

Operating Temperature range

-55 °C to 175 °C

Package

DPAK (PG-TO252-3)

Planned to be available until at least

2029

Polarity

N

Ptot max

63 W

QG (typ @10V)

20 nC

QG (typ @10V) max

26 nC

Qualification

Automotive

RDS (on) (@10V) max

9 mΩ

RthJC max

2.4 K/W

Technology

OptiMOS™T

VDS max

40 V

VGS(th)

3 V

VGS(th) max

4 V

VGS(th) min

2.1 V

Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Package (RoHS compliant)
  • 100% Avalanche tested

Description

  • Low switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized total gate charge
  • Smaller driver output stages

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