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BSZ086P03NS3 G
  • BSZ086P03NS3 G

BSZ086P03NS3 G

Active and preferred

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Infineon Technologies BSZ086P03NS3 G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.27

Ciss

3190 pF

Coss

1520 pF

ID (@25°C) max

-40 A

IDpuls max

-160 A

Operating Temperature max

150 °C

Operating Temperature min

-55 °C

Package

PQFN 3.3 x 3.3

Polarity

P

Ptot max

69 W

QG (typ @10V)

43.2 nC

RDS (on) (@10V) max

8.6 mΩ

Rth

1.8 K/W

VDS max

-30 V

VGS(th)

-2.5 V

Apps

Medium voltage IBC (48 V), Edge computing, Mobile device and smartphone solutions, Power conversion

Features

  • Enhancement mode
  • Normal, logic or super logic level
  • Avalanche rated
  • Pb-free lead plating; RoHS compliant

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