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AIDK12S65C5
  • AIDK12S65C5

AIDK12S65C5

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.

Infineon Technologies AIDK12S65C5 Product Info

16 April 2026 0

Parameters

I(FSM) max

50 A

IF max

12 A

IR

2 µA

Ptot max

62 W

QC

18 nC

Qualification

Automotive

RthJC

1.9 K/W

VF

1.5 V

Apps

On-board charging (OBC)

Features

  • semiconductor material - Silicon Carbide
  • Benchmark switching behavior
  • No reverse recovery/ No forward recovery
  • Temperature independent switching
  • High surge current capability
  • Pb-free lead plating; RoHS compliant
  • Enhanced system efficiency
  • Cost/Size Savings from Reduced Cooling
  • Enabling Higher Frequency, Power Density
  • Enhance reliability at lower temperature
  • Reduced EMI

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