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IAUTN15S6N038T
  • IAUTN15S6N038T

IAUTN15S6N038T

Active and preferred

IAUTN15S6N038T is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLT 10x15 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.

Infineon Technologies IAUTN15S6N038T Product Info

16 April 2026 10

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

170 A

IDpuls

602 A

Launch year

2025

Operating Temperature range

-55 °C to 175 °C

Package

TOLT (PG-HDSOP-16-1)

Polarity

N

QG (typ @10V) max

88 nC

QG (typ @10V)

67 nC

Qualification

Automotive

RDS (on) (@10V) max

3.8 mΩ

RthJC

0.6 K/W

Technology

OptiMOS™6

VDS max

150 V

VGS(th) range

3 V to 4 V

VGS(th)

3.5 V

Apps

BMS (electric two- & three-wheelers), Traction inverter (electric two- & three-wheelers), DC-DC converter high-voltage, DC-DC converter high-voltage (commercial vehicles), On-board charging (OBC)

Features

  • Breakdown voltage of 150V
  • Low RDS(on) → lowest conduction losses
  • N-ch.-Enhancement mode-Normal Level
  • Tight distribution of VGS(th)
  • 175°C operating temperature
  • High avalanche capability

Description

  • High power density
  • By far industry’s lowest RDS(on)
  • High ID for high-power applications
  • High switching performance

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