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IMDQ75R060M2H
  • IMDQ75R060M2H

IMDQ75R060M2H

Active and preferred

The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.

Infineon Technologies IMDQ75R060M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

30 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

Q-DPAK

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

78 mΩ

RDS (on) (@ Tj = 25°C)

60 mΩ

RthJC max

1.17 K/W

Technology

CoolSiC™ G2

VDS max

750 V

Features

  • 100% avalanche tested
  • Best‑in‑class RDS(on) x Qfr
  • Excellent RDS(on) x Qoss & RDS(on) x QG
  • Unique low Crss/Ciss & high VGS(th)
  • Improved package interconnect with .XT
  • Driver source pin available

Description

  • Enhanced robustness and reliability
  • Superior efficiency in hard switching
  • Higher switching frequency
  • Robustness against parasitic turn on
  • Best‑in‑class thermal dissipation
  • Reduced switching losses

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