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IFF450B12ME4S8P_B11
  • IFF450B12ME4S8P_B11

IFF450B12ME4S8P_B11

Active and preferred

EconoDUAL™ 3 1200V half-bridge IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 Diode, NTC, integrated shunts, PressFIT contact technology, and pre-applied Thermal Interface Material .

Infineon Technologies IFF450B12ME4S8P_B11 Product Info

16 April 2026 0

Parameters

Configuration

half-bridge

Dimensions (length)

152 mm

Dimensions (width)

62 mm

Features

PressFIT, TIM

Housing

EconoDUAL™ 3

IC(nom) / IF(nom)

450 A

IC max

450 A

Qualification

Industrial

Technology

IGBT4 - E4

VCE(sat) (Tvj=25°C typ)

1.75 V

VF (Tvj=25°C typ)

1.95 V

Voltage Class max

1200 V

Features

  • Low VCEsat
  • Tvj op = 150°C
  • Standard housing
  • Integrated shunts resistors
  • PressFIT control pins
  • Screw power terminals
  • Pre-applied thermal interface mat.
  • Optimized IGBT turn-on
  • Optimized diode recovery losses
  • Molded terminals

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