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BSC012N06NS
  • BSC012N06NS

BSC012N06NS

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Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Infineon Technologies BSC012N06NS Product Info

16 April 2026 0

Parameters

Battery voltage

24-36 V

Budgetary Price €/1k

1.52

ID (@25°C) max

306 A

ID (@ TC=25°C) max

306 A

IDpuls max

1224 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6

Pin Count

8 Pins

Polarity

N

Ptot max

214 W

QG (typ @10V)

115 nC

RDS (on) (@10V) max

1.2 mΩ

Special Features

Fused leads

VDS max

60 V

VGS(th)

2.8 V

Apps

Medium voltage IBC (48 V), Telecommunications infrastructure, Multicopters and drones, Cordless power tools and outdoor power equipment, Power conversion

Features

  • Lowest RDS(on) enables highest power density and efficiency
  • Higher operating temperature rating to 175°C for increased reliability
  • Low RthJC for excellent thermal behavior
  • Lower reverse recovery charge (Qrr)

Description

  • Lower full load temperature
  • Less paralleling
  • Reduced overshoot
  • Increased system power density
  • Smaller size
  • System cost reduction
  • Engineering costs and effort reduction

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