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BSZ0910ND
  • BSZ0910ND

BSZ0910ND

The leading OptiMOS™ technology combined with the PQFN 3.0 x 3.0mm package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0910ND OptiMOS™ 30V halfbridge fits perfectly in wireless charging and drives (e.g. multicopter) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency.

Infineon Technologies BSZ0910ND Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.43

ID (@25°C) max

25 A

IDpuls max

40 A

Mounting

SMD

Operating Temperature range

-55 °C to 150 °C

Package

Symmetrical Dual 3x3

Polarity

N

Ptot max

31 W

Qgd

1 nC

QG (typ @10V)

8.2 nC

RDS (on) (@4.5V) max

13 mΩ

RthJA max

65 K/W

RthJC max

4 K/W

Rth

4 K/W

VDS max

30 V

VGS(th)

1.6 V

Features

  • Symmetric half-bridge with very low RDS(on) in a small 3.0 x 3.0mm package outline
  • Exposed pads
  • Logic level (4.5V rated)
  • RoHS compliant 6/6 (full lead free)

Description

  • Low switching losses
  • High switching frequency operation
  • Lowest parasitics
  • Low operating temperature
  • Low gate drive losses
  • RoHS 6/6 lead free product

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