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IDWD10G200C5
  • IDWD10G200C5

IDWD10G200C5

Active and preferred

CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

Infineon Technologies IDWD10G200C5 Product Info

16 April 2026 0

Parameters

I(FSM) max

97 A

IF max

10 A

IR

5 µA

Package

PG-TO247-2

Ptot max

245 W

QC

89 nC

Qualification

Industrial

RthJC

0.47 K/W

VF

1.5 V

Apps

EV charging, Photovoltaic

Features

  • VRRM = 2000 V
  • IF = 10 A
  • VF = 1.5 V
  • No reverse recovery current
  • No forward recovery
  • High surge current capability
  • Low forward voltage
  • Tight forward voltage distribution
  • Specified dv/dt ruggedness
  • .XT interconnection technology

Description

  • High power density
  • Matching MOSFET available
  • Topology simplification

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