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IDM08G120C5
  • IDM08G120C5

IDM08G120C5

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The CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Infineon Technologies IDM08G120C5 Product Info

16 April 2026 0

Parameters

I(FSM) max

70 A

IF max

8 A

IR

3 µA

Package

PG-TO252-2 (DPAK)

Ptot max

167 W

QC

28 nC

Qualification

Industrial

RthJC

0.7 K/W

VF

1.65 V

Apps

Photovoltaic, Motor control, Uninterruptible power supplies (UPS)

Features

  • Best-in-class forward voltage (VF)
  • No reverse recovery charge
  • Mild positive temp. depend. of VF
  • Best-in-class surge current capab.
  • Excellent thermal performance

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