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IAUZN04S7L019
  • IAUZN04S7L019

IAUZN04S7L019

Active and preferred

A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.

Infineon Technologies IAUZN04S7L019 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria

ID (@25°C) max

60 A

Launch year

2025

Operating Temperature range

-55 °C to 175 °C

Package

S3O8

Planned to be available until at least

2038

Polarity

N

QG (typ @10V) max

44 nC

QG (typ @10V)

34 nC

Qualification

Automotive

RDS (on) (@10V) max

1.9 mΩ

Technology

OptiMOS™7

VDS max

40 V

VGS(th) range

1.2 V to 1.8 V

VGS(th)

1.5 V

Apps

Automotive power distribution, Body control modules (BCM), Seat control module, Smart power closure system, Smart window control module, Electric parking brake, Electric power steering (EPS), Automotive electric pumps & fans 12 V

Features

  • 3x3 mm² small footprint
  • 60A high current capability
  • Advanced leadless package
  • Leading-edge OptiMOS™-7 40V technology
  • RDS(on) range: 1.2 mΩ – 4.9 mΩ
  • Cu-clip for low RDS(on) & low inductance
  • High avalanche capability
  • High SOA ruggedness
  • PPAP capable device

Description

  • Highest power and current density
  • High thermal capacity lead-frame package
  • Reduced conduction losses
  • Optimized switching behavior
  • Reduced form factor vs. leaded packages
  • JEDEC Industry std. package PG-TSDSON-8

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