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FF33MR12W1M1HP_B11
  • FF33MR12W1M1HP_B11

FF33MR12W1M1HP_B11

Active and preferred

EasyDUAL™ 1B 1200 V, 33 mΩ half-bridge module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface material and PressFIT Contact Technology

Infineon Technologies FF33MR12W1M1HP_B11 Product Info

16 April 2026 0

Parameters

Applications

Solar, EV Charger, ESS, UPS

Configuration

Half-bridge

Dimensions (length)

62.8 mm

Dimensions (width)

33.8 mm

Features

TIM, PressFIT

Housing

Easy 1B

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

33 mΩ

Apps

Motor control, Uninterruptible power supplies (UPS)

Features

  • Best-in-class package: 12 mm height
  • Easy module packages
  • Very low module stray inductance
  • Wide RBSOA
  • 1200 V CoolSiC™ MOSFET
  • Rec. drive volt: +15...+18V & 0…-5V
  • Max. gate-source: +23 V & -10 V
  • Max. gate-source: +23 V & -10 V
  • Tvjop < 175°C (overload condition)
  • PressFIT pins
  • Integrated NTC temperature sensor
  • Thermal interface material

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