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IAUCN10S7N025T
  • IAUCN10S7N025T

IAUCN10S7N025T

Active and preferred

IAUCN10S7N025T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our innovative, top-side cooled SSO10T 5x7mm² SMD package. The SSO10T package helps customers achieve big advancements in cooling and power density. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.

Infineon Technologies IAUCN10S7N025T Product Info

16 April 2026 0

Parameters

ID (@25°C) max

175 A

Operating Temperature range

-55 °C to 175 °C

Package

PG-LHDSO-10

Planned to be available until at least

2040

Polarity

N

QG (typ @10V) max

93 nC

QG (typ @10V)

71 nC

Qualification

Automotive

RDS (on) (@10V) max

2.5 mΩ

Technology

OptiMOS™7

VDS max

100 V

VGS(th) range

2.3 V to 3.2 V

VGS(th)

2.8 V

Features

  • Direct cooling path to ECU housing
  • Virtually no heat flows into PCB
  • Industry’s largest exposed pad area
  • Freedom to route traces under package
  • Can mount parts on back side of PCB
  • Industry’s best on-resistance, R<sub>DS(on)</sub>
  • Fast switching times (turn on/off)
  • Tight threshold voltage, V<sub>GS(th)</sub>, range
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

Description

  • Enables excellent thermal management
  • Thermal impedance improved 20% to 50%
  • Thermal resistance improved 20% to 50%
  • Helps reduce ECU volume or PCB area
  • Helps reduce PCB cost (area, Cu, vias)
  • Reduces PCB and system design effort
  • Helps achieve highest power density
  • Minimized conduction losses
  • Superior switching performance
  • Well-suited for parallel placement
  • Quality and robustness for automotive
  • Potential for second source supplier

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