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FS520R12A8P1B
  • FS520R12A8P1B

FS520R12A8P1B

Active and preferred

The power module implements Infineon’s next generation IGBT chip technology 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes

Infineon Technologies FS520R12A8P1B Product Info

16 April 2026 0

Parameters

Configuration

Sixpack

Family

Silicon Carbide MOSFET Modules

Features

PinFin Base Plate, Short tabs

Housing

HybridPACK™ Drive G2

Launch year

2026

Planned to be available until at least

2038

Qualification

Automotive

Technology

IGBT EDT 1200 V

VCES (Tvj=25°C typ)

1200 V

Voltage Class max

1200 V

Features

  • VCES = 1200 V, ICN = 520 A
  • Low VCE,sat & switching losses
  • Low Qg and Crss
  • Low inductive design
  • Tvj,op = 175°C
  • On-chip temperature sensor
  • 4.2 kV DC insulation
  • High creepage & clearance
  • Compact & high power density
  • Direct-cooled PinFin
  • PressFIT contact technology
  • RoHS compliant & UL 94 V0

Description

  • Higher temperature cycling capability
  • Integrated diode temperature sensors
  • New plastic material
  • Better temperature capability
  • New frame design for lower system BOM
  • Lower AC contact resistance and tab temp
  • PressFIT Contact Technology
  • RoHS compliant
  • Completely Pb free
  • Superior reliability

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