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IAUTN06S5N008G
  • IAUTN06S5N008G

IAUTN06S5N008G

Active and preferred

The IAUTN06S5N008G is a 0.78 mΩ, 60 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS™ 5 technology. Next to other applications, the device is designed for HV-LV DCDC converter.

Infineon Technologies IAUTN06S5N008G Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

504 A

Launch year

2023

Operating Temperature range

-55 °C to 175 °C

Package

TOLG

Planned to be available until at least

2038

Polarity

N

QG (typ @10V)

210 nC

QG (typ @10V) max

273 nC

Qualification

Automotive

RDS (on) (@10V) max

0.78 mΩ

Technology

OptiMOS™5

VDS max

60 V

VGS(th) range

2.2 V to 3 V

VGS(th)

2.6 V

Features

  • OptiMOS™ 5 power MOSFET
  • N-channel–Enhancement mode–Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • RoHS compliant
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Ideal for HV-LV DCDC converter
  • Also available in TOLL and TOLT package

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