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DF120R12W2H3_B27
  • DF120R12W2H3_B27

DF120R12W2H3_B27

EasyPACK™ 2B 1200 V, 120 A booster IGBT module with PressFIT contact technology and High Speed IGBT H3.

Infineon Technologies DF120R12W2H3_B27 Product Info

16 April 2026 0

Parameters

Configuration

Booster

Dimensions (length)

56.7 mm

Dimensions (width)

48 mm

Features

PressFIT

Housing

EasyPACK™ 2B

IC(nom) / IF(nom)

120 A

IC max

120 A

Qualification

Industrial

Technology

IGBT3 - H3

VCE(sat) (Tvj=25°C typ)

2.05 V

VF (Tvj=25°C typ)

2 V

Voltage Class max

1200 V

Apps

Photovoltaic

Features

  • Low switching losses
  • Fast silicon diode 1200 V
  • Al2O3 substrate
  • Integrated NTC temperature sensor
  • PressFIT contact technology

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