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BSC094N06LS5
  • BSC094N06LS5

BSC094N06LS5

Active and preferred

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Infineon Technologies BSC094N06LS5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.26

ID (@25°C) max

47 A

IDpuls max

188 A

Mounting

SMD

Operating Temperature range

-55 °C to 150 °C

Package

SuperSO8 5x6

Pin Count

8 Pins

Polarity

N

Ptot max

36 W

Qgd

2 nC

QG (typ @4.5V)

7 nC

RDS (on) (@10V) max

9.4 mΩ

RDS (on) (@4.5V) max

13.4 mΩ

RDS (on) (@4.5V LL) max

13.4 mΩ

RthJA max

50 K/W

RthJC max

3.5 K/W

Rth

2.1 K/W

Special Features

Logic Level

VDS max

60 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Apps

Battery energy storage (BESS)

Features

  • Low R DS(on) in small package
  • Low gate charge
  • Lower output charge
  • Logic level compatibility

Description

  • Higher power density designs
  • Higher switching frequency
  • Reduced part count with 5V supplies
  • Driven directly from microcontrollers
System cost reduction

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