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IRF1010E
  • IRF1010E

IRF1010E

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon Technologies IRF1010E Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.44

ID (@25°C) max

84 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-220

Polarity

N

Ptot max

170 W

Qgd

29.3 nC

QG (typ @10V)

86.6 nC

RDS (on) (@10V) max

12 mΩ

RthJC max

0.9 K/W

Tj max

175 °C

VDS max

60 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

VGS max

20 V

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Industry standard surface-mount power package
  • High-current rating

Description

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • Standard pinout allows for drop in replacement
  • High current carrying capability

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