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BGA7M1N6
  • BGA7M1N6

BGA7M1N6

Silicon Germanium Low Noise Amplifier for LTE

Infineon Technologies BGA7M1N6 Product Info

16 April 2026 0

Parameters

Frequency

1805 - 2200 MHz

Gain

12.6 dB

I

4.4 mA

IIP3

7 dBm

NF

0.65 dB

P-1dB (in)

-3 dBm

VCC operating range

1.5 V to 3.6 V

Apps

Mobile device and smartphone solutions

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