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BFS483
  • BFS483

BFS483

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA

Infineon Technologies BFS483 Product Info

16 April 2026 0

Parameters

fT

8 GHz

Gmax

19 dB @900 MHz

IC max

65 mA

NFmin

0.90 dB @900 MHz

OIP3

26.5 dBm

OP1dB

9 dBm

Package

SOT363

Ptot

450 mW

VCEO max

12 V

Features

  • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
  • fT = 8 GHz, F = 0.9 dB at 900 MHz
  • Two (galvanic) internal isolated Transistor in one package
  • For orientation in reel see package information in datasheet
  • Pb-free (RoHS compliant) package

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