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AIMW120R080M1
  • AIMW120R080M1

AIMW120R080M1

The AIMW120R080M1 meets automotive industry's high reliability, quality & performance demands. CoolSiC™ MOSFETs enable higher switching frequency, reducing magnetic component volume by 25% & cutting costs. It meets new EV efficiency standards, ensuring a very long, safe lifetime. Additional features: low gate charge & capacitance, no reverse recovery losses, low switching losses & threshold-free on-state characteristics for an easy design-in.

Infineon Technologies AIMW120R080M1 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

33 A

Launch year

2021

Operating Temperature range

-55 °C to 175 °C

Planned to be available until at least

2033

Polarity

N

Qualification

Automotive

RDS (on) (@ Tj = 25°C)

80 mΩ

Technology

CoolSiC™ G1

VDS max

1200 V

Apps

On-board charging (OBC)

Features

  • semiconductor material - Silicon Carbide
  • Very low switching losses
  • Threshold-free on state characteristic
  • IGBT-compatible driving voltage
  • 0 V turn-off gate voltage
  • Gate Threshold VGS(th)=4.5V
  • Robust body diode for synchronous
  • Temp independent turn-off switching loss

Description

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

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