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ISZ106N12LM6
  • ISZ106N12LM6

ISZ106N12LM6

Active and preferred

This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 10.6 mOhm on-resistance. ISZ106N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family .

Infineon Technologies ISZ106N12LM6 Product Info

16 April 2026 0

Parameters

Battery voltage

48-72 V

Budgetary Price €/1k

0.71

ID (@25°C) max

62 A

IDpuls max

248 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3 x 3.3

Polarity

N

Ptot max

94 W

QG (typ @4.5V)

10.4 nC

QG (typ @10V)

19.6 nC

RDS (on) (@10V) max

10.6 mΩ

RDS (on) (@4.5V) max

14.2 mΩ

Special Features

Logic Level

VDS max

120 V

VGS(th) range

1.2 V to 2.2 V

VGS(th)

1.7 V

Features

  • Features: 58% better RDS(on)
  • up to 66% better FOMg
  • Up to 90% better Qrr
  • Up to 35% better FOMoss

Description

  • Very low on-resistance
  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant
  • Halogen-free
  • MSL1 classified

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