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AIMW120R060M1H
  • AIMW120R060M1H

AIMW120R060M1H

The AIMW120R060M1H is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance. The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost decrease of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.

Infineon Technologies AIMW120R060M1H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

36 A

Launch year

2021

Operating Temperature range

-55 °C to 175 °C

Planned to be available until at least

2033

Polarity

N

Qualification

Automotive

RDS (on) (@ Tj = 25°C)

60 mΩ

Technology

CoolSiC™ G1

VDS max

1200 V

Apps

DC-DC converter high-voltage, On-board charging (OBC)

Features

  • semiconductor material - Silicon Carbide
  • Very low switching
  • Threshold-free
  • IGBT-compatible V
  • 0 V turn-off gate V
  • Gate Threshold VGS(th)=4.5V
  • Robust body diode for synchronous
  • Temp independent turn-off switching loss

Description

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

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