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BTN8962TA
  • BTN8962TA

BTN8962TA

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It is part of the MOTIX™ single half-bridge IC family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. The integrated driver IC features diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, undervoltage, overcurrent and short circuit.

Infineon Technologies BTN8962TA Product Info

16 April 2026 0

Parameters

Classification

QM

MCU

No

Over current detection min

30 A

Planned to be available until at least

2032

Power Stage

Yes

Qualification

Automotive

RDSON_H(typ)

6.7 mΩ

RDSON_L(typ)

7.5 mΩ

Supply Voltage absolute max ratings

40 V

Features

  • Path resistance of max. 30.3 mΩ @ 150 °C
  • Low-side: max. 16.9 mΩ @ 150 °C
  • Enhanced switching for reduced switching
  • Capable for high PWM frequency combined
  • Low quiescent current of typ. 7μA @ 25°C
  • Switched mode current limitation
  • Current limitation level of 30 A min.
  • Status flag diagnosis
  • Overtemp shutdown with latch behaviour
  • Undervoltage shut down
  • Driver circuit with logic level inputs
  • Adjustable slew rates for optimized EMI

Description

  • Integrated MOSFETs
  • High current output control
  • Easy thermal protection
  • Cost optimized design
  • Flexible configuration
  • Integrated diegnosis & protection
  • AEC qualified

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