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BTN9960LV
  • BTN9960LV

BTN9960LV

Active and preferred

The MOTIX™ BTN9960LV The device contains one p-channel high-side MOSFET and one n-channel low-side MOSFET with an integrated driver IC. Due to the p-channel high-side switch the need for a charge pump is eliminated thus minimizing EMI. . It offers easy microcontroller interfacing, logic level inputs, current sense diagnosis, protection against various faults, and a small HSOF-7-1 package.

Infineon Technologies BTN9960LV Product Info

16 April 2026 0

Parameters

Classification

ISO 26262-ready

Interfaces

Direct

MCU

No

Over current detection min

35 A

Planned to be available until at least

2037

Power Stage

Yes

Qualification

Automotive

RDSON_H(typ)

6.3 mΩ

RDSON_L(typ)

3.4 mΩ

Supply Voltage absolute max ratings

40 V

Apps

Automotive body electronics & power distribution, Automotive body control module (BCM), Door control module, Smart power closure system, Automotive BMS

Features

  • Supply voltage: 8-18V (up to 40V)
  • Typ. 9.7 mΩ path resistance
  • Low 3.3µA quiescent current
  • Protection: overcurrent, UV, OT
  • 35 A min overcurrent detection
  • 8 selectable slew rates
  • UV with recovery delay
  • AEC-Q100/Q006 Grade 1)

Description

  • Integrated PMOS, NMOS, and Driver IC
  • Higher system reliability
  • Integrated diagnosis & protection
  • Half- & full-bridge support
  • Otimizes PCB layout
  • No charge pump, low EMI
  • Easy thermal protection

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