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AIDW10S65C5
  • AIDW10S65C5

AIDW10S65C5

The 5th Generation CoolSiC™ Automotive Schottky Diode embodies Infineon's advanced Silicon Carbide Schottky Barrier diode technology. Its compact design and thin wafer-based technology offer improved efficiency across all load conditions, with superior thermal characteristics and low figure of merit (Qc x Vf). Complementing Infineon’s IGBT and CoolMOS™ portfolio, it meets demanding application requirements in the 650V voltage class.

Infineon Technologies AIDW10S65C5 Product Info

16 April 2026 0

Parameters

I(FSM) max

58 A

IF max

10 A

IR

1.7 µA

Package

TO-247

Ptot max

65.2 W

QC

15 nC

Qualification

Automotive

RthJC

1.78 K/W

VF

1.5 V

Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Benchmark switching behavior
  • No reverse recovery/ No forward recovery
  • Temperature independent switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHS compliant
  • Junction Temperature range from  -40°C to 175°C
  • System efficiency improvement over Si diodes
  • System cost / size savings due to reduced cooling requirements
  • Enabling higher frequency / increased power density solutions
  • Higher system reliability due to lower operating temperatures
  • Reduced EMI

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