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2EDR3149XQE
  • 2EDR3149XQE

2EDR3149XQE

Active and preferred

EiceDRIVER™ Compact 2300V dual-channel isolated gate driver with +/-6.5 A typical peak output current in a 14-pin DSO wide body package for GaN HEMTs, IGBTs, MOSFETs and SiC MOSFETs. Qualified according to AEC-Q100. Offers dead-time control (DTC) and independent channel operation, allowing for operation as a dual-channel low-side driver, a dual-channel high-side driver, or a half-bridge gate driver with a configurable dead-time.

Infineon Technologies 2EDR3149XQE Product Info

16 April 2026 0

Parameters

Channels

2

Configuration

High-side

Input Vcc range

-0.3 V to 17 V

Isolation Type

Galvanic isolation - Reinforced

Output Current (Source)

6 A

Output Current (Sink)

6.5 A

Package

PG-DSO-14-79

Product Name

2EDR3149XQE

Qualification

AEC-Q100

Turn Off Propagation Delay

39 ns

Turn On Propagation Delay

39 ns

VBS UVLO (On)

20.5 V

VBS UVLO (Off)

18.9 V

Voltage Class

2300 V

Apps

Automotive auxiliary systems, DC-DC converter high-voltage, DC-DC converter high-voltage (commercial vehicles), On-board charging (electric commercial vehicles), On-board charging (OBC), Industrial motor drives and controls

Features

  • For up to 2300 V Switches
  • 2300 V input-output functional isolation
  • Galvanically isolated coreless xformer
  • 35 V abs. max. output supply voltage
  • Up to 17 V input supply voltage
  • 39ns typ propogation delay
  • 20.5 V / 18.9 V UVLO protection
  • CTI 600 Package with 8mm creepage
  • Enable Pin
  • Product validation according to AEC-Q100

Description

  • Strong 6.5 A output stage
  • Best-in-class CMTI of > 200 kV/µs
  • 8 mm input-to-output
  • 3.3 mm ch-to-ch
  • Part-to-part prop delay skew+ of 8 ns max
  • Ch-to-ch prop delay skew of 5ns max
  • IEC 60747-17 (planned), UL 1577
  • VIORM = 1767 V (peak, reinforced)
  • VISO = 5.7 kV (rms) for 1 min
  • UVLO options for GaN, Si, IGBT, SiC
  • Pin-to-pin package option

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