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IPB017N10N5LF
  • IPB017N10N5LF

IPB017N10N5LF

Active and preferred

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.�

Infineon Technologies IPB017N10N5LF Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

2.64

ID (@25°C) max

180 A

IDpuls max

720 A

Mounting

SMD

Operating Temperature range

-55 °C to 150 °C

Package

D2PAK 7pin (TO-263 7pin)

Pin Count

7 Pins

Polarity

N

Ptot max

313 W

Qgd

141 nC

QG (typ @10V)

195 nC

RDS (on) (@10V) max

1.7 mΩ

RthJA max

62 K/W

RthJC max

0.4 K/W

Rth

0.25 K/W

Special Features

Wide SOA

VDS max

100 V

VGS(th) range

2.5 V to 4.1 V

VGS(th)

3.3 V

Apps

Medium voltage IBC (48 V), Automotive body electronics & power distribution, Automotive telematics control unit (TCU), Telecommunications infrastructure, Industrial robots

Features

  • R DS(on) and wide (SOA)
  • High max. pulse current
  • High continuous pulse current

Description

  • Rugged linear mode operation
  • Low conduction losses
  • Faster start-up with higher in-rush

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