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1ED3330MC12M
  • 1ED3330MC12M

1ED3330MC12M

Active and preferred

EiceDRIVER™ Enhanced 5.7 kV single-channel isolated gate driver IC with ±12 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm) ideal for SiC MOSFETs. The gate driver IC also includes integrated protection features such as DESAT protection, active Miller clamp driver, and active shutdown for SiC MOSFETs.

Infineon Technologies 1ED3330MC12M Product Info

16 April 2026 0

Parameters

Channels

1

Configuration

High-side

Input Vcc range

3 V to 5.5 V

Isolation Type

Galvanic isolation - Reinforced

Output Current (Sink)

12 A

Output Current (Source)

12 A

Package

PG-DSO-16-33

PDout

654 mW

Product Name

1ED3330MC12M

Qualification

Industrial

RDSON_H(max)

1.05 Ω

RDSON_H(typ)

0.45 Ω

RDSON_L (max)

0.55 Ω

RDSON_L(typ)

0.25 Ω

RthJA

130 K/W

Turn Off Propagation Delay

70 ns

Turn On Propagation Delay

70 ns

VBS UVLO (Off)

12.15 V

VBS UVLO (On)

14 V

VCC UVLO (Off)

2.5 V

VCC UVLO (On)

3 V

Voltage Class

2300 V

Apps

Battery energy storage (BESS), EV charging, Photovoltaic, Motor control, Uninterruptible power supplies (UPS)

Features

  • Integrated protection features
  • +/-12 A typical peak output current
  • Separate source and sink outputs
  • 35 V abs maximum output voltage
  • UVLO for SiC MOSFETs
  • Fast DESAT detect and notification
  • 3.3 V and 5 V input supply
  • High CMTI >200 kV/us
  • DSO 300 mil package with 0.65 pitch
  • Small space-saving package
  • Miller clamp driver

Description

  • Output current ideal for driving SiC
  • Reduction in circuit complexity
  • Small footprint for optimized PCB
  • Fast short-circuit reporting
  • Shutdown through FLT pin
  • Tight delay matching for low deadtime

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