0
ACTIVE
Number of channels |
1 |
Isolation rating |
Reinforced |
Power switch |
IGBT, SiCFET |
Withstand isolation voltage (VISO) (Vrms) |
5000 |
Working isolation voltage (VIOWM) (Vrms) |
1414 |
Transient isolation voltage (VIOTM) (VPK) |
7071 |
Peak output current (A) |
20 |
Peak output current (source) (typ) (A) |
20 |
Peak output current (sink) (typ) (A) |
20 |
Features |
Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, SPI, Short circuit protection, Soft turn-off, Two-level turn-off |
Output VCC/VDD (min) (V) |
12 |
Output VCC/VDD (max) (V) |
30 |
Input supply voltage (min) (V) |
3 |
Input supply voltage (max) (V) |
5.5 |
Propagation delay time (µs) |
0.15 |
Input threshold |
CMOS |
Operating temperature range (°C) |
-40 to 125 |
Rating |
Automotive |
Rise time (ns) |
55 |
Fall time (ns) |
55 |
Undervoltage lockout (typ) (V) |
Programmable |
TI functional safety category |
Functional Safety-Compliant |
SSOP (DFC)-32-106.09 mm² 10.3 x 10.3
The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
