0
Number of channels |
1 |
Isolation rating |
Reinforced |
Power switch |
GaNFET, MOSFET |
Withstand isolation voltage (VISO) (Vrms) |
5700 |
Working isolation voltage (VIOWM) (Vrms) |
1000 |
Transient isolation voltage (VIOTM) (VPK) |
8000 |
Peak output current (A) |
6 |
Peak output current (source) (typ) (A) |
4 |
Peak output current (sink) (typ) (A) |
6 |
Features |
High CMTI |
Output VCC/VDD (min) (V) |
6 |
Output VCC/VDD (max) (V) |
18 |
Input supply voltage (min) (V) |
3 |
Input supply voltage (max) (V) |
5.5 |
Propagation delay time (µs) |
0.028 |
Input threshold |
CMOS, TTL |
Operating temperature range (°C) |
-40 to 125 |
Rating |
Catalog |
Bootstrap supply voltage (max) (V) |
1500 |
Rise time (ns) |
5 |
Fall time (ns) |
6 |
Undervoltage lockout (typ) (V) |
5 |
SOIC (DWV)-8-67.275 mm² 5.85 x 11.5
The UCC5304 device is an isolated single-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFETs and GaNFETs in PFC, Isolated AC/DC, DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100-V/ns common-mode transient immunity (CMTI).
The UCC5304 is available in a 8.5 mm SOIC-8 (DWV) package and can support isolation voltage up to 5-kVRMS. Compared to an optocoupler, the UCC5304 family has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.
Protection features include: IN pin rejects input transient shorter than 5-ns; both input and output can withstand –2-V spikes for 200-ns, both supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated.
With these features, this device enables high efficiency, high power density, and robustness in a wide variety of power applications.