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UCC5304
  • UCC5304
  • UCC5304

UCC5304

ACTIVE

5kVrms, 4A/6A single-channel isolated gate driver with 5V UVLO for GaNFETs & MOSFETs

Texas Instruments UCC5304 Product Info

1 April 2026 0

Parameters

Number of channels

1

Isolation rating

Reinforced

Power switch

GaNFET, MOSFET

Withstand isolation voltage (VISO) (Vrms)

5700

Working isolation voltage (VIOWM) (Vrms)

1000

Transient isolation voltage (VIOTM) (VPK)

8000

Peak output current (A)

6

Peak output current (source) (typ) (A)

4

Peak output current (sink) (typ) (A)

6

Features

High CMTI

Output VCC/VDD (min) (V)

6

Output VCC/VDD (max) (V)

18

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

5.5

Propagation delay time (µs)

0.028

Input threshold

CMOS, TTL

Operating temperature range (°C)

-40 to 125

Rating

Catalog

Bootstrap supply voltage (max) (V)

1500

Rise time (ns)

5

Fall time (ns)

6

Undervoltage lockout (typ) (V)

5

Package

SOIC (DWV)-8-67.275 mm² 5.85 x 11.5

Features

  • Reinforced isolation
  • Single channel in DWV Package with 8.5-mm creepage distance
  • CMTI greater than 100-V/ns
  • 4-A peak source, 6-A peak sink output
  • Switching parameters:
    • 40-ns maximum propagation delay
    • 5-ns maximum delay matching
    • 5.5-ns maximum pulse-width distortion
    • 35-µs maximum VDD power-up delay
  • Up to 18-V VDD output drive supply
    • 5-V VDD UVLO
  • Operating temp. range (TA) –40°C to 125°C
  • Rejects input pulses shorter than 5-ns
  • TTL and CMOS compatible inputs
  • Reinforced isolation
  • Single channel in DWV Package with 8.5-mm creepage distance
  • CMTI greater than 100-V/ns
  • 4-A peak source, 6-A peak sink output
  • Switching parameters:
    • 40-ns maximum propagation delay
    • 5-ns maximum delay matching
    • 5.5-ns maximum pulse-width distortion
    • 35-µs maximum VDD power-up delay
  • Up to 18-V VDD output drive supply
    • 5-V VDD UVLO
  • Operating temp. range (TA) –40°C to 125°C
  • Rejects input pulses shorter than 5-ns
  • TTL and CMOS compatible inputs

Description

The UCC5304 device is an isolated single-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFETs and GaNFETs in PFC, Isolated AC/DC, DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100-V/ns common-mode transient immunity (CMTI).

The UCC5304 is available in a 8.5 mm SOIC-8 (DWV) package and can support isolation voltage up to 5-kVRMS. Compared to an optocoupler, the UCC5304 family has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

Protection features include: IN pin rejects input transient shorter than 5-ns; both input and output can withstand –2-V spikes for 200-ns, both supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated.

With these features, this device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC5304 device is an isolated single-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFETs and GaNFETs in PFC, Isolated AC/DC, DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100-V/ns common-mode transient immunity (CMTI).

The UCC5304 is available in a 8.5 mm SOIC-8 (DWV) package and can support isolation voltage up to 5-kVRMS. Compared to an optocoupler, the UCC5304 family has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

Protection features include: IN pin rejects input transient shorter than 5-ns; both input and output can withstand –2-V spikes for 200-ns, both supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated.

With these features, this device enables high efficiency, high power density, and robustness in a wide variety of power applications.

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