0
Number of channels |
1 |
Isolation rating |
Reinforced |
Power switch |
GaNFET, MOSFET |
Withstand isolation voltage (VISO) (Vrms) |
5700 |
Working isolation voltage (VIOWM) (Vrms) |
1000 |
Transient isolation voltage (VIOTM) (VPK) |
8000 |
Peak output current (A) |
6 |
Peak output current (source) (typ) (A) |
4 |
Peak output current (sink) (typ) (A) |
6 |
Features |
High CMTI |
Output VCC/VDD (min) (V) |
6 |
Output VCC/VDD (max) (V) |
18 |
Input supply voltage (min) (V) |
3 |
Input supply voltage (max) (V) |
5.5 |
Propagation delay time (µs) |
0.028 |
Input threshold |
CMOS, TTL |
Operating temperature range (°C) |
-40 to 125 |
Rating |
Catalog |
Bootstrap supply voltage (max) (V) |
1500 |
Rise time (ns) |
5 |
Fall time (ns) |
6 |
Undervoltage lockout (typ) (V) |
5 |
SOIC (DWV)-8-67.275 mm² 5.85 x 11.5