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UCC23513
  • UCC23513

UCC23513

ACTIVE

5.7kVrms, 4A/5A single-channel opto-compatible isolated gate driver with 8 & 12V UVLO options

Texas Instruments UCC23513 Product Info

1 April 2026 0

Parameters

Number of channels

1

Isolation rating

Reinforced

Power switch

IGBT, MOSFET, SiCFET

Withstand isolation voltage (VISO) (Vrms)

5700

Working isolation voltage (VIOWM) (Vrms)

1500

Transient isolation voltage (VIOTM) (VPK)

8000

Peak output current (A)

4.5

Peak output current (source) (typ) (A)

4.5

Peak output current (sink) (typ) (A)

5.3

Features

Opto-compatible input

Output VCC/VDD (min) (V)

14

Output VCC/VDD (max) (V)

33

Input threshold

4 mA, 4mA

Operating temperature range (°C)

-40 to 125

Rating

Catalog

Bootstrap supply voltage (max) (V)

1500

Fall time (ns)

25

Undervoltage lockout (typ) (V)

8, 12

Package

SOIC (DWY)-6-53.82 mm² 4.68 x 11.5

Features

  • single channel isolated gate driver with opto-compatible input
  • Pin-to-pin, drop in upgrade for opto isolated gate drivers
  • peak output current
  • 14-V to 33-V output driver supply voltage
    • 8-V (B) and 12-V VCC UVLO Options
  • Rail-to-rail output
  • 105-ns (maximum) propagation delay
  • 25-ns (maximum) part-to-part delay matching
  • 35-ns (maximum) pulse width distortion
  • 150-kV/µs (minimum) common-mode transient immunity (CMTI)
  • Isolation barrier life >50 Years
  • 13-V reverse polarity voltage handling capability on input stage
  • Stretched SO-6 package with >8.5-mm creepage and clearance
  • Operating junction temperature, TJ: –40°C to +150°C
  • Safety-related certifications:
    • 8000-VPK reinforced isolation per DIN V VDE V0884-11: 2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CQC certification per GB4943.1-2011
  • single channel isolated gate driver with opto-compatible input
  • Pin-to-pin, drop in upgrade for opto isolated gate drivers
  • peak output current
  • 14-V to 33-V output driver supply voltage
    • 8-V (B) and 12-V VCC UVLO Options
  • Rail-to-rail output
  • 105-ns (maximum) propagation delay
  • 25-ns (maximum) part-to-part delay matching
  • 35-ns (maximum) pulse width distortion
  • 150-kV/µs (minimum) common-mode transient immunity (CMTI)
  • Isolation barrier life >50 Years
  • 13-V reverse polarity voltage handling capability on input stage
  • Stretched SO-6 package with >8.5-mm creepage and clearance
  • Operating junction temperature, TJ: –40°C to +150°C
  • Safety-related certifications:
    • 8000-VPK reinforced isolation per DIN V VDE V0884-11: 2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CQC certification per GB4943.1-2011

Description

The opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.7-kVRMS isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. can drive both low side and high side power FETs bring significant performance and reliability upgrades over opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. igh performance and reliability makes ideal for use in all types of motor drives, . The higher operating temperature opens up opportunities for applications not supported by traditional optocouplers.

The opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.7-kVRMS isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. can drive both low side and high side power FETs bring significant performance and reliability upgrades over opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. igh performance and reliability makes ideal for use in all types of motor drives, . The higher operating temperature opens up opportunities for applications not supported by traditional optocouplers.

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