Product
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UCC21737-Q1
  • UCC21737-Q1
  • UCC21737-Q1
  • UCC21737-Q1

UCC21737-Q1

ACTIVE

Automotive 10-A isolated single-channel gate driver for SiC/IGBT, active short-circuit protection

Texas Instruments UCC21737-Q1 Product Info

1 April 2026 0

Parameters

Number of channels

1

Isolation rating

Reinforced

Power switch

IGBT, SiCFET

Withstand isolation voltage (VISO) (Vrms)

5700

Working isolation voltage (VIOWM) (Vrms)

1500

Transient isolation voltage (VIOTM) (VPK)

8000

Peak output current (A)

10

Peak output current (source) (typ) (A)

10

Peak output current (sink) (typ) (A)

10

Features

Active Short Circuit (ASC) protection, Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Over Current Protection, Power good, Short circuit protection, Soft turn-off, Split output

Output VCC/VDD (min) (V)

13

Output VCC/VDD (max) (V)

33

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

5.5

Propagation delay time (µs)

0.09

Input threshold

CMOS

Operating temperature range (°C)

-40 to 125

Rating

Automotive

Bootstrap supply voltage (max) (V)

2121

Rise time (ns)

33

Fall time (ns)

27

Undervoltage lockout (typ) (V)

12

TI functional safety category

Functional Safety Quality-Managed

Package

SOIC (DW)-16-106.09 mm² 10.3 x 10.3

Features

  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • External active Miller clamp
  • 900mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40ns noise transient and pulse on input pins
  • 12V VDD UVLO and –3V VEE UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • External active Miller clamp
  • 900mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40ns noise transient and pulse on input pins
  • 12V VDD UVLO and –3V VEE UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

Description

The UCC21737-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10A peak source and sink currents.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common-mode transient immunity (CMTI).

The UCC21737-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21737-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10A peak source and sink currents.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common-mode transient immunity (CMTI).

The UCC21737-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

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