0
ACTIVE
Number of channels |
2 |
Isolation rating |
Reinforced |
Power switch |
IGBT, MOSFET, SiCFET |
Withstand isolation voltage (VISO) (Vrms) |
5000 |
Working isolation voltage (VIOWM) (Vrms) |
1500 |
Transient isolation voltage (VIOTM) (VPK) |
7070 |
Peak output current (A) |
6 |
Peak output current (source) (typ) (A) |
4 |
Peak output current (sink) (typ) (A) |
6 |
Features |
Disable, High CMTI, Programmable dead time |
Output VCC/VDD (min) (V) |
13 |
Output VCC/VDD (max) (V) |
25 |
Input supply voltage (min) (V) |
3 |
Input supply voltage (max) (V) |
5.5 |
Input threshold |
CMOS, TTL |
Operating temperature range (°C) |
-40 to 150 |
Rating |
Catalog |
Fall time (ns) |
8 |
Undervoltage lockout (typ) (V) |
5, 8, 12 |
TI functional safety category |
Functional Safety-Capable |
SOIC (DW)-16-106.09 mm² 10.3 x 10.3
Universal: dual low-side, dual high-side or halfbridge driver
The UCC21550 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.
The UCC21550 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).
Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.
With all these advanced features, the UCC21550 device enables high efficiency, high power density, and robustness in a wide variety of power applications.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
