0
ACTIVE
Number of channels |
2 |
Isolation rating |
Reinforced |
Power switch |
GaNFET, IGBT, MOSFET |
Withstand isolation voltage (VISO) (Vrms) |
5700 |
Working isolation voltage (VIOWM) (Vrms) |
1000 |
Transient isolation voltage (VIOTM) (VPK) |
8000 |
Peak output current (A) |
6 |
Peak output current (source) (typ) (A) |
4 |
Peak output current (sink) (typ) (A) |
6 |
Features |
Disable, Programmable dead time |
Output VCC/VDD (min) (V) |
6 |
Output VCC/VDD (max) (V) |
18 |
Input supply voltage (min) (V) |
3 |
Input supply voltage (max) (V) |
5.5 |
Propagation delay time (µs) |
0.028 |
Input threshold |
CMOS, TTL |
Operating temperature range (°C) |
-40 to 125 |
Rating |
Catalog |
Bootstrap supply voltage (max) (V) |
1414 |
Rise time (ns) |
5 |
Fall time (ns) |
6 |
Undervoltage lockout (typ) (V) |
5 |
SOIC (DW)-16-106.09 mm² 10.3 x 10.3
The UCC2154x is an isolated dual channel gate driver family designed with up to 4 A/6 A peak source/sink current to drive power MOSFET, IGBT, and GaN transistors. UCC2154x in DWK package also offers 3.3-mm minimum channel-to-channel spacing, which facilitates higher bus voltage.
The UCC2154x family can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5.7-kVRMS isolation barrier, with a minimum of 125-V/ns common-mode transient immunity (CMTI).
Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and negative voltage handling for up to –5-V spikes for 50 ns on input pins. All supplies have UVLO protection.