0
ACTIVE
Number of channels |
2 |
Isolation rating |
Basic |
Power switch |
IGBT, MOSFET, SiCFET |
Withstand isolation voltage (VISO) (Vrms) |
3000 |
Working isolation voltage (VIOWM) (Vrms) |
850 |
Transient isolation voltage (VIOTM) (VPK) |
4242 |
Peak output current (A) |
6 |
Peak output current (source) (typ) (A) |
4 |
Peak output current (sink) (typ) (A) |
6 |
Features |
Disable, High CMTI, Programmable dead time |
Output VCC/VDD (min) (V) |
9.2 |
Output VCC/VDD (max) (V) |
25 |
Input supply voltage (min) (V) |
3 |
Input supply voltage (max) (V) |
5.5 |
Input threshold |
CMOS, TTL |
Operating temperature range (°C) |
-40 to 150 |
Rating |
Automotive |
Fall time (ns) |
8 |
Undervoltage lockout (typ) (V) |
5, 8, 12 |
TI functional safety category |
Functional Safety-Capable |
SOIC (D)-16-59.4 mm² 9.9 x 6
Universal: dual low-side, dual high-side or halfbridge driver
The UCC21330-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.
The UCC21330-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).
Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.
With all these advanced features, the UCC21330-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.
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