Product
0
TPS50601-SP
  • TPS50601-SP
  • TPS50601-SP

TPS50601-SP

ACTIVE

Radiation-hardened QMLV, 3-V to 6.3-V input, 6-A synchronous step-down converter

Texas Instruments TPS50601-SP Product Info

1 April 2026 5

Parameters

Rating

Space

Topology

Buck

Iout (max) (A)

6

Vin (max) (V)

6.3

Vin (min) (V)

3

Vout (max) (V)

6.35

Vout (min) (V)

0.795

Features

Enable, Frequency synchronization, Over Current Protection, Power good, Pre-Bias Start-Up, Soft Start Adjustable, Synchronous Rectification, Tracking, UVLO adjustable

Control mode

current mode

Operating temperature range (°C)

-55 to 125

Iq (typ) (A)

0.005

Duty cycle (max) (%)

95

Package

CFP (HKH)-20-93.726 mm² 12.7 x 7.38

Features

  • 5962R10221:
    • Radiation Hardness Assurance (RHA) up to TID 100 krad (Si)
    • ELDRS Free 100 krad (Si) – 10 mRAD(Si)/s
    • Single Event Latchup (SEL) Immune to
      LET = 85 MeV-cm2/mg (See Radiation Report, http://www.ti.com/radiation)
    • SEB and SEGR Immune to 85 MeV-cm2/mg, SOA Curve Available (See Radiation Report)
    • SET/SEFI Cross-Section Plot Available (See Radiation Report)
  • Peak Efficiency: 95% (VO = 3.3 V)
  • Integrated 55-mΩ/50-mΩ MOSFETs
  • Split Power Rail: 1.6 to 6.3 V on PVIN
  • Power Rail: 3 to 6.3 V on VIN
  • 6-A Maximum Output Current
  • Flexible Switching Frequency Options:
    • 100-kHz to 1-MHz Adjustable Internal Oscillator
    • External Sync Capability: 100 kHz to 1 MHz
    • Sync Pin can be Configured as a 500-kHz Output for Master/Slave Applications
  • 0.795-V ±1.258% Voltage Reference at 25°C
  • Monotonic Start-Up into Prebiased Outputs
  • Adjustable Soft Start Through External Capacitor
  • Input Enable and Power-Good Output for Power Sequencing
  • Power Good Output Monitor for Undervoltage and Overvoltage
  • Adjustable Input Undervoltage Lockout (UVLO)
  • 20-Pin Thermally-Enhanced Ceramic Flatpack Package (HKH)
  • See www.ti.com/swift for SWIFT Documentation
  • See the Tools & Software Tab
  • 5962R10221:
    • Radiation Hardness Assurance (RHA) up to TID 100 krad (Si)
    • ELDRS Free 100 krad (Si) – 10 mRAD(Si)/s
    • Single Event Latchup (SEL) Immune to
      LET = 85 MeV-cm2/mg (See Radiation Report, http://www.ti.com/radiation)
    • SEB and SEGR Immune to 85 MeV-cm2/mg, SOA Curve Available (See Radiation Report)
    • SET/SEFI Cross-Section Plot Available (See Radiation Report)
  • Peak Efficiency: 95% (VO = 3.3 V)
  • Integrated 55-mΩ/50-mΩ MOSFETs
  • Split Power Rail: 1.6 to 6.3 V on PVIN
  • Power Rail: 3 to 6.3 V on VIN
  • 6-A Maximum Output Current
  • Flexible Switching Frequency Options:
    • 100-kHz to 1-MHz Adjustable Internal Oscillator
    • External Sync Capability: 100 kHz to 1 MHz
    • Sync Pin can be Configured as a 500-kHz Output for Master/Slave Applications
  • 0.795-V ±1.258% Voltage Reference at 25°C
  • Monotonic Start-Up into Prebiased Outputs
  • Adjustable Soft Start Through External Capacitor
  • Input Enable and Power-Good Output for Power Sequencing
  • Power Good Output Monitor for Undervoltage and Overvoltage
  • Adjustable Input Undervoltage Lockout (UVLO)
  • 20-Pin Thermally-Enhanced Ceramic Flatpack Package (HKH)
  • See www.ti.com/swift for SWIFT Documentation
  • See the Tools & Software Tab

Description

The TPS50601-SP is a radiation hardened, 6.3-V, 6-A synchronous step-down converter, which is optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and a high switching frequency, reducing the inductor's footprint. The devices are offered in a thermally enhanced 20-pin ceramic, dual in-line flatpack package.

The output voltage startup ramp is controlled by the SS/TR pin which allows operation as either a stand alone power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and the open drain power good pins.

Cycle-by-cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit which turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal shutdown temperature.

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