Product
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TPS22922
  • TPS22922
  • TPS22922
  • TPS22922

TPS22922

ACTIVE

3.6-V, 2-A, 14-mΩ, 35-nA leakage load switch with output discharge

Texas Instruments TPS22922 Product Info

1 April 2026 3

Parameters

Imax (A)

2

Vin (max) (V)

3.6

Vin (min) (V)

0.9

Number of channels

1

Features

Inrush current control, Quick output discharge

Quiescent current (Iq) (typ) (µA)

0.07

Soft start

Fixed Rise Time

Rating

Catalog

Ron (typ) (mΩ)

14

Shutdown current (ISD) (typ) (µA)

0.035

Current limit type

None

Function

Inrush current control

FET

Internal

Operating temperature range (°C)

-40 to 85

Device type

Load switches

Package

DSBGA (YFP)-6-1.4000000000000001 mm² 1 x 1.4000000000000001

Features

  • Integrated P-Channel Load Switch
  • Input Voltage: 0.9 V to 3.6 V
  • ON-Resistance (Typical Values)
    • rON = 14 mΩ at VIN = 3.6 V
    • rON = 20 mΩ at VIN = 2.5 V
    • rON = 33 mΩ at VIN = 1.8 V
    • rON = 67 mΩ at VIN = 1.2 V
    • rON = 116 mΩ at VIN = 1.0 V
  • 2-A Maximum Continuous Switch Current
  • Quiescent Current:
    • Typical 78 nA at 1.8 V
  • Shutdown Current:
    • Typical 35 nA at 1.8 V
  • Low Threshold Control Input Enable the use of
    1.2 V, 1.8 V, 2.5 V, or 3.3 V Logic
  • Controlled Slew Rate to Avoid Inrush Currents
    • tR = 30 µs at VIN = 1.8 V
      (TPS22921/2)
    • tR = 200 µs at VIN = 1.8 V
      (TPS22922B)
  • Quick Output Discharge (TPS22922/2B)
  • ESD Performance Tested Per JESD 22
    • 3000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Six Terminal Wafer-Chip-Scale DSBGA Package
    (nominal dimensions shown - see Mechanical,
    Packaging, and Orderable Information     for details)
    • 0.9-mm × 1.4-mm, 0.5-mm Pitch,
      0.5 mm Height (YZP)
    • 0.9-mm × 1.4-mm, 0.5-mm Pitch,
      0.625 mm Height (YZT)
    • 0.8-mm × 1.2-mm, 0.4-mm Pitch,
      0.5-mm Height (YFP)
  • Integrated P-Channel Load Switch
  • Input Voltage: 0.9 V to 3.6 V
  • ON-Resistance (Typical Values)
    • rON = 14 mΩ at VIN = 3.6 V
    • rON = 20 mΩ at VIN = 2.5 V
    • rON = 33 mΩ at VIN = 1.8 V
    • rON = 67 mΩ at VIN = 1.2 V
    • rON = 116 mΩ at VIN = 1.0 V
  • 2-A Maximum Continuous Switch Current
  • Quiescent Current:
    • Typical 78 nA at 1.8 V
  • Shutdown Current:
    • Typical 35 nA at 1.8 V
  • Low Threshold Control Input Enable the use of
    1.2 V, 1.8 V, 2.5 V, or 3.3 V Logic
  • Controlled Slew Rate to Avoid Inrush Currents
    • tR = 30 µs at VIN = 1.8 V
      (TPS22921/2)
    • tR = 200 µs at VIN = 1.8 V
      (TPS22922B)
  • Quick Output Discharge (TPS22922/2B)
  • ESD Performance Tested Per JESD 22
    • 3000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Six Terminal Wafer-Chip-Scale DSBGA Package
    (nominal dimensions shown - see Mechanical,
    Packaging, and Orderable Information     for details)
    • 0.9-mm × 1.4-mm, 0.5-mm Pitch,
      0.5 mm Height (YZP)
    • 0.9-mm × 1.4-mm, 0.5-mm Pitch,
      0.625 mm Height (YZT)
    • 0.8-mm × 1.2-mm, 0.4-mm Pitch,
      0.5-mm Height (YFP)

Description

TPS22921, TPS22922, and TPS22922B are small, low rON load switches with controlled turnon. The TPS22921/2/2B contains a P-channel MOSFET that can operate over an input voltage range of 0.9 V to 3.6 V. The switch is controlled by an on/off input (ON), which can interface directly with low-voltage control signals. In TPS22922 and in TPS22922B, a 65-Ω on-chip load resistor is added for output quick discharge when the switch is turned off. The rise time (slew rate) of the device is internally controlled in order to avoid inrush current: TPS22921 and TPS22922 feature a 30-µs rise time, whereas TPS22922B is 200 µs.

TPS22921, TPS22922, and TPS22922B feature low quiescent and shutdown currents and are available in space-saving 6-pin wafer-chip-scale packages DSBGA (WCSP: YZP and YZT with 0.5-mm pitch and YFP with 0.4-mm pitch) which make them ideal for portable electronics. The devices are characterized for operation over the free-air temperature range of –40°C to 85°C.

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