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TLV2313-Q1
  • TLV2313-Q1
  • TLV2313-Q1
  • TLV2313-Q1

TLV2313-Q1

ACTIVE

Automotive-grade, dual, 5.5-V, 1-MHz, RRIO operational amplifier

Texas Instruments TLV2313-Q1 Product Info

1 April 2026 0

Parameters

Number of channels

2

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

5.5

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

1.8

Rail-to-rail

In, Out

GBW (typ) (MHz)

1

Slew rate (typ) (V/µs)

0.5

Vos (offset voltage at 25°C) (max) (mV)

3

Iq per channel (typ) (mA)

0.065

Vn at 1 kHz (typ) (nV√Hz)

26

Rating

Automotive

Operating temperature range (°C)

-40 to 125

Offset drift (typ) (µV/°C)

2

Features

Cost Optimized, EMI Hardened

CMRR (typ) (dB)

85

Iout (typ) (A)

0.015

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

-0.2

Input common mode headroom (to positive supply) (typ) (V)

0.2

Output swing headroom (to negative supply) (typ) (V)

0.075

Output swing headroom (to positive supply) (typ) (V)

-0.1

Package

SOIC (D)-8-29.4 mm² 4.9 x 6

Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1: –40°C to +125°C
      Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 3A
    • Device CDM ESD Classification Level C6
  • Precision Amplifier for Cost-Sensitive Systems
  • Low IQ: 65 µA/ch
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 26 nV/√Hz at 1 kHz
  • Gain Bandwidth: 1 MHz
  • Rail-to-Rail Input/Output
  • Low Input Bias Current: 1 pA
  • Low Offset Voltage: 0.75 mV
  • Unity-Gain Stable
  • Internal RFI/EMI Filter
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1: –40°C to +125°C
      Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 3A
    • Device CDM ESD Classification Level C6
  • Precision Amplifier for Cost-Sensitive Systems
  • Low IQ: 65 µA/ch
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 26 nV/√Hz at 1 kHz
  • Gain Bandwidth: 1 MHz
  • Rail-to-Rail Input/Output
  • Low Input Bias Current: 1 pA
  • Low Offset Voltage: 0.75 mV
  • Unity-Gain Stable
  • Internal RFI/EMI Filter

Description

The TLVx313-Q1 family of single- and dual-channel operational amplifiers combine low power consumption with good performance. This makes them designed for a wide range of applications, such as infotainment, engine control units, automotive lighting and more. The family features rail-to-rail input and output (RRIO) swings, low quiescent current (65 µA, typical), wide bandwidth (1 MHz) and very low noise (26 nV/√Hz at 1 kHz), making them attractive for a variety of battery-powered applications that require a good balance between cost and performance. Further, low-input-bias current enables these devices to be used in applications with megaohm source impedances.

The robust design of the TLVx313-Q1 devices provides ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 100 pF, integrated RFI/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

The devices are optimized for operation at voltages as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended temperature range of –40°C to +125°C.

The single-channel TLV313-Q1 device is available in an SC70-5 package.The dual-channel TLV2313-Q1 device is offered in SOIC-8 (D) and VSSOP-8 (DGK) packages.

The TLVx313-Q1 family of single- and dual-channel operational amplifiers combine low power consumption with good performance. This makes them designed for a wide range of applications, such as infotainment, engine control units, automotive lighting and more. The family features rail-to-rail input and output (RRIO) swings, low quiescent current (65 µA, typical), wide bandwidth (1 MHz) and very low noise (26 nV/√Hz at 1 kHz), making them attractive for a variety of battery-powered applications that require a good balance between cost and performance. Further, low-input-bias current enables these devices to be used in applications with megaohm source impedances.

The robust design of the TLVx313-Q1 devices provides ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 100 pF, integrated RFI/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

The devices are optimized for operation at voltages as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended temperature range of –40°C to +125°C.

The single-channel TLV313-Q1 device is available in an SC70-5 package.The dual-channel TLV2313-Q1 device is offered in SOIC-8 (D) and VSSOP-8 (DGK) packages.

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