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SN74LVC2G241
  • SN74LVC2G241
  • SN74LVC2G241
  • SN74LVC2G241

SN74LVC2G241

ACTIVE

2-ch, 1.65-V to 5.5-V buffers with 3-state outputs

Texas Instruments SN74LVC2G241 Product Info

1 April 2026 0

Parameters

Technology family

LVC

Supply voltage (min) (V)

1.65

Supply voltage (max) (V)

5.5

Number of channels

2

IOL (max) (mA)

32

Supply current (max) (µA)

10

IOH (max) (mA)

-32

Input type

Standard CMOS

Output type

3-State

Features

Balanced outputs, Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns)

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Package

DSBGA (YZP)-8-2.8125 mm² 2.25 x 1.25

Features

  • Available in the Texas Instruments
    NanoFree™ Package
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 4.1 ns at 3.3 V
  • Low Power Consumption, 10-µA Maximum ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce)
    <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot)
    >2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
  • Can Be Used as a Down Translator to Translate Inputs From a Max of 5.5 V Down
    to the VCC Level
  • Latch-Up Performance Exceeds 100 mA Per
    JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)
  • Available in the Texas Instruments
    NanoFree™ Package
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 4.1 ns at 3.3 V
  • Low Power Consumption, 10-µA Maximum ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce)
    <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot)
    >2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
  • Can Be Used as a Down Translator to Translate Inputs From a Max of 5.5 V Down
    to the VCC Level
  • Latch-Up Performance Exceeds 100 mA Per
    JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

Description

This dual buffer and line driver is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G241 device is designed specifically to improve both the performance and density of 3-state memory-address drivers, clock drivers, and bus-oriented receivers and transmitters.

NanoFree package technology is a major breakthrough in IC packaging concepts, using the die as the package.

The SN74LVC2G241 device is organized as two 1-bit line drivers with separate output-enable (1OE, 2OE) inputs. When 1OE is low and 2OE is high, the device passes data from the A inputs to the Y outputs. When 1OE is high and 2OE is low, the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor, and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking or the current-sourcing capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

This dual buffer and line driver is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G241 device is designed specifically to improve both the performance and density of 3-state memory-address drivers, clock drivers, and bus-oriented receivers and transmitters.

NanoFree package technology is a major breakthrough in IC packaging concepts, using the die as the package.

The SN74LVC2G241 device is organized as two 1-bit line drivers with separate output-enable (1OE, 2OE) inputs. When 1OE is low and 2OE is high, the device passes data from the A inputs to the Y outputs. When 1OE is high and 2OE is low, the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor, and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking or the current-sourcing capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

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