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SN74CBTD3305C
  • SN74CBTD3305C
  • SN74CBTD3305C

SN74CBTD3305C

ACTIVE

5-V, 1:1 (SPST), 2-channel bus switch with –2-V undershoot protection and level shifting (active H)

Texas Instruments SN74CBTD3305C Product Info

1 April 2026 0

Parameters

Protocols

Analog

Configuration

1:1 SPST

Number of channels

2

Bandwidth (MHz)

20

Supply voltage (max) (V)

5.5

Ron (typ) (mΩ)

3000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

128

COFF (typ) (pF)

5

CON (typ) (pF)

12.5

OFF-state leakage current (max) (µA)

10

Ron (max) (mΩ)

20000

VIH (min) (V)

2

VIL (max) (V)

0.8

Rating

Catalog

Package

SOIC (D)-8-29.4 mm² 4.9 x 6

Features

  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • VCC Operating Range From 4.5 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • VCC Operating Range From 4.5 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Description

The SN74CBTD3305C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3305C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3305C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

The SN74CBTD3305C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3305C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3305C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

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