Texas Instruments SN74CBT3383C Product Info

Parameters

Protocols	Analog
Configuration	Crosspoint/exchange
Number of channels	10
Bandwidth (MHz)	200
Supply voltage (max) (V)	5.5
Ron (typ) (mΩ)	3000
Input/output voltage (min) (V)	0
Input/output voltage (max) (V)	5.5
Operating temperature range (°C)	-40 to 85
ESD CDM (kV)	1
Input/output continuous current (max) (mA)	128
COFF (typ) (pF)	8
CON (typ) (pF)	18.5
OFF-state leakage current (max) (µA)	10
Ron (max) (mΩ)	12000
VIH (min) (V)	2
VIL (max) (V)	0.8
Rating	Catalog

Package

SOIC (DW)-24-159.65 mm² 15.5 x 10.3

Features

Undershoot protection for off-isolation on A and B ports up to −2 V
Bidirectional data flow, with near-zero propagation delay
Low on-state resistance (r_on) characteristics (r_on = 3 Ω typical)
Low input output capacitance minimizes loading and signal distortion (Cio (OFF) = 8 pF typical)
Data and control inputs provide undershoot clamp diodes
Low power consumption (ICC = 3 µA maximum)
V_CC operating range from 4 V to 5.5 V data I/Os support 0 to 5-V signaling levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V)
Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs
Ioff supports partial-power-down mode operation
Latch-up performance exceeds 100 mA per JESD 78, Class II
ESD performance tested per JESD 22− 2000-V Human-Body Model (A114-B, Class II)− 1000-V Charged-Device Model (C101)
Supports both digital and analog applications: PCI interface, memory interleaving, bus isolation, low-distortion signal gating

Undershoot protection for off-isolation on A and B ports up to −2 V
Bidirectional data flow, with near-zero propagation delay
Low on-state resistance (r_on) characteristics (r_on = 3 Ω typical)
Low input output capacitance minimizes loading and signal distortion (Cio (OFF) = 8 pF typical)
Data and control inputs provide undershoot clamp diodes
Low power consumption (ICC = 3 µA maximum)
V_CC operating range from 4 V to 5.5 V data I/Os support 0 to 5-V signaling levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V)
Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs
Ioff supports partial-power-down mode operation
Latch-up performance exceeds 100 mA per JESD 78, Class II
ESD performance tested per JESD 22− 2000-V Human-Body Model (A114-B, Class II)− 1000-V Charged-Device Model (C101)
Supports both digital and analog applications: PCI interface, memory interleaving, bus isolation, low-distortion signal gating

Description

The SN74CBT3383C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (r_on), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3383C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3383C is organized as a 10-bit bus switch, or as a 5-bit bus-exchange switch with a single output-enable (BE) input that provides data exchanging between four signal ports. The select (BX) input controls the data path of the bus-exchange switch. When BE is low, the A port is connected to the B port, allowing bidirectional data flow between ports. When BE is high, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT3383C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (r_on), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3383C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3383C is organized as a 10-bit bus switch, or as a 5-bit bus-exchange switch with a single output-enable (BE) input that provides data exchanging between four signal ports. The select (BX) input controls the data path of the bus-exchange switch. When BE is low, the A port is connected to the B port, allowing bidirectional data flow between ports. When BE is high, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

ELECTRONIC COMPONENTS
All In One Distributor

SN74CBT3383C

5-V, crosspoint/exchange, 10-channel FET bus switch with –2-V undershoot protection

Texas Instruments SN74CBT3383C Product Info

Parameters

Package

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

SN74CBT3383C

5-V, crosspoint/exchange, 10-channel FET bus switch with –2-V undershoot protection

Texas Instruments SN74CBT3383C Product Info

Parameters

Package

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor