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SN74CB3Q3305
  • SN74CB3Q3305
  • SN74CB3Q3305
  • SN74CB3Q3305

SN74CB3Q3305

ACTIVE

3.3-V, 1:1 (SPST), 2-channel FET bus switch (active high)

Texas Instruments SN74CB3Q3305 Product Info

1 April 2026 0

Parameters

Protocols

Analog, I2C, UART

Configuration

1:1 SPST

Number of channels

2

Bandwidth (MHz)

500

Supply voltage (max) (V)

3.6

Ron (typ) (mΩ)

3000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

250

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

3.5

CON (typ) (pF)

8

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

9000

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

Package

TSSOP (PW)-8-19.2 mm² 3 x 6.4

Features

  • High-bandwidth data path (up to 500 MHz)(1)
  • 5-V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3 Ω typical)
  • Supports input voltage beyond supply on data I/O ports
    • 0 to 5 V switching with 3.3 V VCC
    • 0 to 3.3 V switching with 2.5 V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input or output capacitance minimizes loading and signal distortion (Cio(OFF) = 3.5 pF typical)
  • Fast switching frequency (fOE = 20 MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.25 mA typical)
  • VCC operating range from 2.3 V to 3.6 V
  • Data I/Os support 0 to 5 V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
  • Control inputs can be driven by TTL or 5 V/3.3 V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, Class II

(1)For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008.

  • High-bandwidth data path (up to 500 MHz)(1)
  • 5-V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3 Ω typical)
  • Supports input voltage beyond supply on data I/O ports
    • 0 to 5 V switching with 3.3 V VCC
    • 0 to 3.3 V switching with 2.5 V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input or output capacitance minimizes loading and signal distortion (Cio(OFF) = 3.5 pF typical)
  • Fast switching frequency (fOE = 20 MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.25 mA typical)
  • VCC operating range from 2.3 V to 3.6 V
  • Data I/Os support 0 to 5 V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
  • Control inputs can be driven by TTL or 5 V/3.3 V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, Class II

(1)For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008.

Description

The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

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