Texas Instruments SN74CB3Q3257 Product Info

Parameters

Protocols	Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART
Configuration	2:1 SPDT
Number of channels	4
Bandwidth (MHz)	500
Supply voltage (max) (V)	3.6
Ron (typ) (mΩ)	4000
Input/output voltage (min) (V)	0
Input/output voltage (max) (V)	5.5
Supply current (typ) (µA)	250
Operating temperature range (°C)	-40 to 85
ESD CDM (kV)	1
Input/output continuous current (max) (mA)	64
COFF (typ) (pF)	3.5
CON (typ) (pF)	10.5
OFF-state leakage current (max) (µA)	1
Ron (max) (mΩ)	9000
VIH (min) (V)	1.7
VIL (max) (V)	0.8
Rating	Catalog

Package

SSOP (DBQ)-16-29.4 mm² 4.9 x 6

Features

High-bandwidth data path (up to 500MHz)
5V Tolerant I/Os with device powered up or powered down
Low and flat on-state resistance (ron) characteristics over operating range (ron= 4Ω typical)
Rail-to-rail switching on data I/O ports
- 0- to 5V Switching with 3.3V VCC
- 0- to 3.3V Switching with 2.5V VCC
Bidirectional data flow with near-zero propagation delay
Low input and output capacitance minimizes loading and signal distortion (Cio(OFF) = 3.5pF typical)
Fast switching frequency (f OE = 20MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (ICC = 0.7mA typical)
VCC Operating range from 2.3V to 3.6V
Data I/Os support 0- to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V)
Control inputs can be driven by TTL or 5V and 3.3V CMOS outputs
Ioff Supports partial-power-down mode operation
Latch-up performance exceeds 100mA Per JESD 78, class II
ESD Performance tested per JESD 22
- 2000V Human body model (A114-B, class II)
- 1000V Charged-device model (C101)
Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating ⁽¹⁾

⁽¹⁾For additional information regarding the performance characteristics of the CB3Q family, refer to the TI CBT-C, CB3T, and CB3Q Signal-Switch Families application report.

High-bandwidth data path (up to 500MHz)
5V Tolerant I/Os with device powered up or powered down
Low and flat on-state resistance (ron) characteristics over operating range (ron= 4Ω typical)
Rail-to-rail switching on data I/O ports
- 0- to 5V Switching with 3.3V VCC
- 0- to 3.3V Switching with 2.5V VCC
Bidirectional data flow with near-zero propagation delay
Low input and output capacitance minimizes loading and signal distortion (Cio(OFF) = 3.5pF typical)
Fast switching frequency (f OE = 20MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (ICC = 0.7mA typical)
VCC Operating range from 2.3V to 3.6V
Data I/Os support 0- to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V)
Control inputs can be driven by TTL or 5V and 3.3V CMOS outputs
Ioff Supports partial-power-down mode operation
Latch-up performance exceeds 100mA Per JESD 78, class II
ESD Performance tested per JESD 22
- 2000V Human body model (A114-B, class II)
- 1000V Charged-device model (C101)
Supports both digital and analog applications: USB interface, differential signal interface, bus isolation, low-distortion signal gating ⁽¹⁾

⁽¹⁾For additional information regarding the performance characteristics of the CB3Q family, refer to the TI CBT-C, CB3T, and CB3Q Signal-Switch Families application report.

Description

The SN74CB3Q3257 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron).

ELECTRONIC COMPONENTS
All In One Distributor

SN74CB3Q3257

3.3-V, 2:1 (SPDT), 4-channel general-purpose FET bus switch

Texas Instruments SN74CB3Q3257 Product Info

Parameters

Package

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

SN74CB3Q3257

3.3-V, 2:1 (SPDT), 4-channel general-purpose FET bus switch

Texas Instruments SN74CB3Q3257 Product Info

Parameters

Package

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor