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SN54SC8T541-SEP
  • SN54SC8T541-SEP
  • SN54SC8T541-SEP

SN54SC8T541-SEP

ACTIVE

Radiation-tolerant 8-bit fixed-direction level translator with 3-state outputs

Texas Instruments SN54SC8T541-SEP Product Info

1 April 2026 3

Parameters

Bits (#)

8

Data rate (max) (Mbps)

150

Topology

Push-Pull

Direction control (typ)

Fixed-direction

Vin (min) (V)

1.2

Vin (max) (V)

5.5

Applications

GPIO

Features

Output enable, Partial power down (Ioff), Single supply, Vcc isolation

Prop delay (ns)

9.6

Technology family

LVT

Supply current (max) (mA)

0.22

Rating

Space

Operating temperature range (°C)

-40 to 125

Package

TSSOP (PW)-20-41.6 mm² 6.5 x 6.4

Features

  • Vendor item drawing available, VID V62/25632-01XE
  • Radiation - Total Ionizing Dose (TID):
    • TID characterized up to 50krad(Si)
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 50MeV-cm2/mg

  • Wide operating range of 1.2V to 5.5V

  • Single-supply voltage translator:

    • Up translation:

      • 1.2V to 1.8V

      • 1.5V to 2.5V

      • 1.8V to 3.3V

      • 3.3V to 5.0V

    • Down translation:

      • 5.0V, 3.3V, 2.5V to 1.8V
      • 5.0V, 3.3V to 2.5V
      • 5.0V to 3.3V
  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 250mA per JESD 17
  • Space enhanced plastic:
    • Supports defense and aerospace applications
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Meets NASA ASTM E595 outgassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
  • Vendor item drawing available, VID V62/25632-01XE
  • Radiation - Total Ionizing Dose (TID):
    • TID characterized up to 50krad(Si)
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 50MeV-cm2/mg

  • Wide operating range of 1.2V to 5.5V

  • Single-supply voltage translator:

    • Up translation:

      • 1.2V to 1.8V

      • 1.5V to 2.5V

      • 1.8V to 3.3V

      • 3.3V to 5.0V

    • Down translation:

      • 5.0V, 3.3V, 2.5V to 1.8V
      • 5.0V, 3.3V to 2.5V
      • 5.0V to 3.3V
  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 250mA per JESD 17
  • Space enhanced plastic:
    • Supports defense and aerospace applications
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Meets NASA ASTM E595 outgassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability

Description

The SN54SC8T541-SEP contains eight buffers with 3-state outputs. The active low output enable pins (OE1 and OE2) control all eight channels, and are configured so that both must be low for the outputs to be active. When the outputs are enabled, the outputs are actively driven low or high. When the outputs are disabled, the outputs are set into the high-impedance state. The output level is referenced to the supply voltage (VCC) and supports 1.8V, 2.5V, 3.3V, and 5V CMOS levels.

The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example, 1.2V input to 1.8V output or 1.8V input to 3.3V output). In addition, the 5V tolerant input pins enable down translation (for example, 3.3V to 2.5V output).

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