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SN54SC8T240-SEP
  • SN54SC8T240-SEP
  • SN54SC8T240-SEP

SN54SC8T240-SEP

ACTIVE

Radiation-tolerant 8-bit inverting fixed-direction level translator with 3-state outputs

Texas Instruments SN54SC8T240-SEP Product Info

1 April 2026 0

Parameters

Bits (#)

8

Data rate (max) (Mbps)

150

Topology

Push-Pull

Direction control (typ)

Fixed-direction

Vin (min) (V)

1.2

Vin (max) (V)

5.5

Applications

GPIO

Features

Output enable, Partial power down (Ioff), Single supply, Vcc isolation

Prop delay (ns)

8.5

Technology family

LVT

Supply current (max) (mA)

0.22

Rating

Space

Operating temperature range (°C)

-55 to 125

Package

TSSOP (PW)-20-41.6 mm² 6.5 x 6.4

Features

  • Vendor item drawing available, VID V62/25630-01XE
  • Radiation - Total Ionizing Dose (TID):
    • TID characterized up to 50krad(Si)
    • TID performance assurance up to 30 krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 50MeV-cm2/mg

  • Wide operating range of 1.2V to 5.5V

  • Single-supply voltage translator:

    • Up translation:

      • 1.2V to 1.8V

      • 1.5V to 2.5V

      • 1.8V to 3.3V

      • 3.3V to 5.0V

    • Down translation:

      • 5.0V, 3.3V, 2.5V to 1.8V
      • 5.0V, 3.3V to 2.5V
      • 5.0V to 3.3V
  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 250mA per JESD 17
  • Space enhanced plastic:
    • Supports defense and aerospace applications
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Meets NASA ASTM E595 outgassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
  • Vendor item drawing available, VID V62/25630-01XE
  • Radiation - Total Ionizing Dose (TID):
    • TID characterized up to 50krad(Si)
    • TID performance assurance up to 30 krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 50MeV-cm2/mg

  • Wide operating range of 1.2V to 5.5V

  • Single-supply voltage translator:

    • Up translation:

      • 1.2V to 1.8V

      • 1.5V to 2.5V

      • 1.8V to 3.3V

      • 3.3V to 5.0V

    • Down translation:

      • 5.0V, 3.3V, 2.5V to 1.8V
      • 5.0V, 3.3V to 2.5V
      • 5.0V to 3.3V
  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 250mA per JESD 17
  • Space enhanced plastic:
    • Supports defense and aerospace applications
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Meets NASA ASTM E595 outgassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability

Description

The SN54SC8T240-SEP device contains eight independent inverting line drivers with 3-state outputs. Each channel performs the Boolean function Y = A in positive logic. The channels are grouped in sets of four, with one OE pin controlling each set. The outputs can be put into a hi-Z state by applying a high on the associated OE pin.

The SN54SC8T240-SEP device contains eight independent inverting line drivers with 3-state outputs. Each channel performs the Boolean function Y = A in positive logic. The channels are grouped in sets of four, with one OE pin controlling each set. The outputs can be put into a hi-Z state by applying a high on the associated OE pin.

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