0
LM74720-Q1
  • LM74720-Q1
  • LM74720-Q1
  • LM74720-Q1
  • LM74720-Q1
  • LM74720-Q1
  • LM74720-Q1

LM74720-Q1

ACTIVE

Automotive, low IQ ideal diode controller with active rectification and load dump protection

Texas Instruments LM74720-Q1 Product Info

1 April 2026 0

Parameters

Vin (max) (V)

65

Vin (min) (V)

3

FET

External back-to-back FET, External single FET

Device type

Ideal diode controller

Number of channels

1

Rating

Automotive

Features

Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection

Iq (typ) (mA)

0.032

Iq (max) (mA)

0.038

TI functional safety category

Functional Safety-Capable

IGate sink (typ) (mA)

2.1

IGate pulsed (typ) (A)

2.1

Operating temperature range (°C)

-40 to 125

VSense reverse (typ) (mV)

-6.5

Design support

EVM

VGS (max) (V)

13

Shutdown current (ISD) (mA) (A)

0.0035

Product type

Ideal diode controller

Package

WSON (DRR)-12-9 mm² 3 x 3

Features

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Low quiescent current, 35 µA (max) in operation
  • Low 3.3-µA (max) shutdown current (EN = Low)
  • Ideal diode operation with 17-mV A to C forward voltage drop regulation
  • Drives external back-to-back N-Channel MOSFETs
  • Integrated 29-mA boost regulator
  • Fast response to reverse current blocking: 0.5 µs
  • Active rectification up to 100 kHz
  • Adjustable overvoltage protection
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-pin WSON package
  • Pin-to-pin compatible with LM74721-Q1
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Low quiescent current, 35 µA (max) in operation
  • Low 3.3-µA (max) shutdown current (EN = Low)
  • Ideal diode operation with 17-mV A to C forward voltage drop regulation
  • Drives external back-to-back N-Channel MOSFETs
  • Integrated 29-mA boost regulator
  • Fast response to reverse current blocking: 0.5 µs
  • Active rectification up to 100 kHz
  • Adjustable overvoltage protection
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-pin WSON package
  • Pin-to-pin compatible with LM74721-Q1

Description

The LM74720-Q1 ideal diode controller drives and controls external back-to-back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong boost regulator with fast turn ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124 where an ECU is subjected to input short interruptions and AC superimpose input signals up to 100-kHz frequency. Low Quiescent Current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cut-off protection feature for load dump protection.

The LM74720-Q1 ideal diode controller drives and controls external back-to-back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong boost regulator with fast turn ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124 where an ECU is subjected to input short interruptions and AC superimpose input signals up to 100-kHz frequency. Low Quiescent Current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cut-off protection feature for load dump protection.

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request