0
ACTIVE
Bootstrap supply voltage (max) (V) |
100 |
Power switch |
MOSFET |
Input supply voltage (min) (V) |
9 |
Input supply voltage (max) (V) |
14 |
Peak output current (A) |
3 |
Operating temperature range (°C) |
-40 to 125 |
Undervoltage lockout (typ) (V) |
8 |
Rating |
Catalog |
Propagation delay time (µs) |
0.022 |
Rise time (ns) |
8 |
Fall time (ns) |
8 |
Iq (mA) |
0.01 |
Input threshold |
TTL |
Channel input logic |
TTL |
Switch node voltage (V) |
-1 |
Driver configuration |
Dual, Noninverting |
HSOIC (DDA)-8-29.4 mm² 4.9 x 6
The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.
These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
