0
Number of channels |
1 |
Vs (min) (V) |
2.7 |
Vs (max) (V) |
36 |
CMRR (min) (dB) |
70 |
Common-mode input low (min) (V) |
-200 |
Common-mode input high (max) (V) |
200 |
Input offset (±) (max) (V) |
0.005 |
Iq (typ) (mA) |
0.6 |
Slew rate (typ) (V/µs) |
1 |
Voltage gain (min) (V/V) |
1 |
Voltage gain (max) (V/V) |
1 |
Small-signal bandwidth (typ) (Hz) |
100000 |
Rating |
Automotive |
Operating temperature range (°C) |
-40 to 125 |
Gain drift (max) (ppm/°C) |
3 |
Gain error (±) (max) (%) |
0.076 |
SOIC (D)-8-29.4 mm² 4.9 x 6
The INA148-Q1 is a precision, low-power, unity-gain difference amplifier with a high common-mode input voltage range. The device consists of a monolithic, precision, bipolar operational amplifier with a thin-film resistor network.
The on-chip resistors are laser trimmed for an accurate 1-V/V differential gain and high common-mode rejection. Excellent temperature tracking of the resistor network maintains high gain accuracy and common-mode rejection over temperature. The INA148-Q1 operates on single or dual supplies. These features make the INA148-Q1 suitable for HEV/EV and Powertrain applications, specifically in battery management systems.
The INA148-Q1 is available in an 8-pin SOIC, surface-mount package, and is specified for operation over the temperature range of –40°C to 125°C.