VQFN-FCRLF (VBN)-18-31.5 mm² 7 x 4.5

The DRV7167A is a 100V half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consist of two 100V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The DRV7167A is available in 7.0mm × 4.5mm × 0.89mm lead-free packages and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the GVDD voltage. A proprietary bootstrap voltage regulation technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device supports turn-on and turn-off slew-rate control for both FETs, single PWM mode for use with IO-limited controllers, short-circuit protection (SCP) , Over-Temperature Detection (OTD) and zero-voltage detection (ZVD) reporting to minimize third quandrant condution time.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.